Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

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• 关键词：Resonant cavity ; Infrared sensors ; Lead-chalcogenides ; Bragg mirrors ; Molecular beam epitaxy
• 刊名：Infrared Physics and Technology
• 出版年：2007
• 期刊代码：70_13504495
• 类别：et
• 出版时间：January 2007
• 卷：49
• 期：3
• 页码：183-186
• 文件大小：353 K

摘要

Narrow spectral band infrared detectors are required for multispectral infrared imaging. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF₂ pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50%are obtained.