Optical properties change in Sb₄₀S₄₀Se₂₀ thin films by light-induced effect

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• 作者：Ramakanta Naik^a ; ^b ; ^{ramakanta@physics.iisc.ernet.in} ; ^{ramakanta.naik@gmail.com} ; Sanjit K. Parida^a ; C. Kumar^a ; R. Ganesan^a ; K.S. Sangunni^a
• 关键词：Chalcogenides ; Thin films ; Optical properties ; FTIR ; XPS
• 刊名：Journal of Alloys and Compounds
• 出版年：2012
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：5 May, 2012
• 卷：522
• 期：Complete
• 页码：172-177
• 文件大小：743 K

摘要

Thin films of Sb₄₀Se₂₀S₄₀ with thickness 1000 nm were prepared by thermal evaporation technique. The amorphous nature of the thin films was verified by X-ray diffractometer. The chemical composition of the deposited thin films was examined by energy dispersive X-ray analysis (EDAX). The changes in optical properties due to the influence of laser radiation on amorphous thin films of Sb₄₀Se₂₀S₄₀ glassy alloy were calculated from absorbance spectra as a function of photon energy in the wavelength region 450-900 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It has been observed that laser-irradiation of the films leads to a decrease in optical band gap while increase in absorption coefficient. The decrease in the optical band gap is explained on the basis of change in nature of films due to disorderness. The optical changes are supported by X-ray photoelectron spectroscopy and Raman spectroscopy.