Facile preparation of p-CuO and p-CuO/n-CuWO₄ junction thin films and their photoelectrochemical properties

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• 作者：Jin You Zheng ; Guang Song ; Chang Woo Kim ; Young Soo Kang ; ^{yskang@sogang.ac.kr}
• 关键词：Copper film ; Cupric oxide ; Copper tungsten oxide ; Photoelectrochemical photocurrent switching ; Electrochemical deposition
• 刊名：Electrochimica Acta
• 出版年：2012
• 期刊代码：30_00134686
• 类别：ch
• 出版时间：1 May, 2012
• 卷：69
• 期：Complete
• 页码：340-344
• 文件大小：973 K

摘要

CuO/CuWO₄ p-n junction thin films were prepared by using electrodeposited Cu films with an acidic cupric lactate system (pH 鈮?#xA0;5). The photoelectrochemical properties of CuO and CuWO₄-CuO films were studied by photoresponse and current-potential characteristics under 1 sun illumination. The photocurrent of CuO films prepared by annealing Cu films electrodeposited at pH 5 is about 0.6 mA/cm² at 鈭?.6 V vs Ag/AgCl. Both p-type and n-type behaviors occurred on CuO-CuWO₄ film in the potential range from 0.8 V to 鈭?.6 V vs Ag/AgCl. The photoelectrochemical photocurrent switching (PEPS) effect was observed in the case of p-CuO/n-CuWO₄ heterojunction and the photocurrent switching potential is +0.33 V vs Ag/AgCl.