In situ observation of electron beam irradiation effects in oxidized polycrystalline Si_1−xGe_x films

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• 作者：Han-Byul Kang ; Jee-Hwan Bae ; Kyung-Hwan Kwak ; Jae-Wook Lee ; Min-Ho Park ; Dae-Hong Ko ; Cheol-Woong Yang
• 关键词：Irradiation ; Oxidation ; SiGe ; TEM
• 刊名：Thin Solid Films
• 出版年：2008
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 April 2008
• 卷：516
• 期：11
• 页码：3486-3492
• 文件大小：2029 K

摘要

This study examined the morphological and compositional changes that occur in oxidized poly-Si_1−xGe_x film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO₂ and GeO₂ phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si_0.6Ge_0.4 films, the agglomeration of GeO₂ was observed at the surface region. On the other hand, in the case of the oxidized poly-Si_0.4Ge_0.6 films, the crystallization of GeO₂ occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.