Solubility limits and phase structures in epitaxial ZnOS alloy films grown by pulsed laser deposition

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• 作者：Yunbin He^a ; ^{ybhe@hubu.edu.cn} ; ^{Yunbin.he@physik.uni-giessen.de} ; Liangheng Wang^a ; Lei Zhang^a ; Mingkai Li^a ; Xunzhong Shang^a ; Yanyan Fang^b ; Changqing Chen^b
• 关键词：ZnOS alloy films ; Pulsed laser deposition ; Epitaxial growth ; Solubility limits ; Phase structures
• 刊名：Journal of Alloys and Compounds
• 出版年：2012
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：5 September, 2012
• 卷：534
• 期：Complete
• 页码：81-85
• 文件大小：788 K

摘要

High-quality ZnO<sub>1鈭?/sub><sub>xsub>S<sub>xsub> thin films were grown epitaxially on c-plane sapphire substrates by pulsed laser deposition using a ZnS ceramic target with varying O<sub>2sub> partial pressures. Single-phase ZnO<sub>1鈭?/sub><sub>xsub>S<sub>xsub> alloys with a wurtzite structure were achieved in composition ranges of 0 猢?#xA0;x 猢?#xA0;0.23 and 0.94 猢?#xA0;x 猢?#xA0;1. Phase separation, i.e., coexistence of ZnO and ZnS in ZnOS ternary alloys was observed for compositions of 0.23 < x < 0.94. The extended S solubility (up to 0.23) implies that ablating the ZnS target under oxygen atmosphere is an efficient way to incorporate S into ZnO towards ZnOS alloys formation. The work provides additional information on the O solubility (0.06) in the S-rich ZnOS films grown by pulsed laser deposition. These results are of importance when considering ZnO<sub>1鈭?/sub><sub>xsub>S<sub>xsub> for making ZnO based quantum structures for advanced optoelectronic devices.