Improvement of stability and pulse energy in a diode-pumped dual-loss-modulated QML Nd:Lu_0.2Y_0.8VO₄ laser with EO modulator and GaAs

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• 作者：Gang Zhang^a ; Shengzhi Zhao^a ; ^{shengzhi_zhao@sdu.edu.cn} ; Guiqiu Li^a ; Dechun Li^a ; Kejian Yang^a ; Kang Cheng^a ; Chao Han^a ; Bin Zhao^b
• 关键词：Dual-loss-modulated QML laser ; Nd ; Lu0.2Y0.8VO4 mixed crystal ; Electro-optic modulator ; Rate equations
• 刊名：Optics Communications
• 出版年：2012
• 期刊代码：50_00304018
• 类别：ph
• 出版时间：1 July, 2012
• 卷：285
• 期：15
• 页码：3289-3294
• 文件大小：907 K

摘要

The Q-switched and mode-locked (QML) performance in a diode-pumped Nd:Lu_0.2Y_0.8VO₄ laser with electro-optic (EO) modulator and GaAs saturaber absorber is investigated. In comparison with the solely passively QML laser with GaAs, the dual-loss-modulated QML laser with EO and GaAs can generate pulses with higher stability and shorter pulse width of Q-switched envelope, as well as higher pulse energy. At the repetition rate 1 kHz of EO, the pulse width of Q-switched pulse envelope has a compression of 89%and the pulse energy has an improvement of 24 times. The QML laser characteristics such as the pulse width, pulse peak power etc. have been measured for different small-signal transmittance (T₀) of GaAs, different reflectivity (R) of output coupler and modulation frequencies of the EO modulator (f_e). The highest peak power and the shortest pulse width of mode-locked pulses are obtained at f_e = 1 kHz, R = 90%and T₀ = 92.6%. By considering the influences of EO modulator, a developed rate equation model for the dual-loss-modulated QML laser with EO modulator and GaAs is proposed. The numerical solutions of the equations are in good agreement with the experimental results.