Effect of fictive temperature on medium range order in v-SiO₂

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• 作者：Chemarin ; C. ; Panczer ; G. ; Champagnon ; B.
• 刊名：Journal of Non-Crystalline Solids
• 出版年：1997
• 期刊代码：50_00223093
• 类别：ms
• 出版时间：August, 1997
• 卷：216
• 期：Complete
• 页码：111-115
• 文件大小：373 K

摘要

The first-order Raman spectra of vitreous SiO₂ between 10 and 650 cm⁻¹ have been measured as a function of sample fictive temperatures, T_F, achieved by laser quenching. The changes observed in the high frequency range of the spectra, > 100 cm⁻¹, which is related to the short range order, are correlated with the shift of the 'Boson peak' (BP) which is present in the low frequency range, < 100 cm⁻¹, and characteristic of the medium-range order. Based on the non-continuous glassy structure model, these observations are attributed to a decrease in the size of domains, associated with a modification of the Si-O-Si angle distribution, with the increase of T_F.