摘要
The paper reports Ti was added to Gd<sub>2sub>O<sub>3sub> as pH sensing membrane on silicon combined with proper rapid thermal annealing for the electrolyte-insulator- semiconductor application. It can be found that the high-k Gd<sub>2sub>TiO<sub>5sub> sensing membrane annealed at 800 掳C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Gd<sub>2sub>TiO<sub>5sub> sensing membrane shows great promise for future bio-medical device applications.