Investigation of Ti-doped Gd<sub>2sub>O<sub>3sub> charge trapping layer with HfO<sub>2sub> blocking oxide for memory application
- 作者：Chyuan Haur Kao<sup> ; sup><sup>chkao@mail.cgu.edu.twsup> ; Chun Chi Chen ; Ching Hua Huang ; Chuan Yu Huang ; Chih Ju Lin ; Jiun Cheng Ou
- 关键词：Ti-doped gadolinium oxide ; Charge trapping layer ; HfO2
- 刊名：Thin Solid Films
- 出版年：2012
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：1 March, 2012
- 卷：520
- 期：10
- 页码：3857-3861
- 文件大小：1094 K
摘要
In this study, Ti-doped gadolinium oxide (Gd<sub>2sub>TiO<sub>5sub>) is investigated by X-ray diffraction, atomic force microscopy, and capacitance voltage curves (C-V) as the charge trapping layer in metal-oxide-high-k material-oxide-silicon structure memories. It was found that the Gd<sub>2sub>TiO<sub>5sub> charge-trapping layer with an HfO<sub>2sub> blocking layer annealed at 900 掳C had a larger window of 4.8 V in the C-V hysteresis loop, a faster program/erase speed and good retention without significant drift up to 10<sup>4sup> cycles. This excellent performance was attributed to the well-crystallized Gd<sub>2sub>TiO<sub>5sub> structure and the higher probability of charges being trapped in the deep trap energy level of the Gd<sub>2sub>TiO<sub>5.sub> This Gd<sub>2sub>TiO<sub>5sub> memory device with post-annealing shows considerable promise for use in future flash memory applications.