Dielectric properties of high-Q (Mg<sub>1-xsub>Zn<sub>xsub>)<sub>1.8sub>Ti<sub>1.1sub>O<sub>4sub> ceramics at microwave frequency
- 作者：Cheng-Liang Huang<sup> ; sup><sup>huangcl@mail.ncku.edu.twsup> ; Yu-Wei Tseng ; Jhih-Yong Chen ; Yuan-Cheng Kuo
- 关键词：Microwave dielectric properties ; High-Q
- 刊名：Journal of the European Ceramic Society
- 出版年：2012
- 期刊代码：53_09552219
- 类别：ms
- 出版时间：August, 2012
- 卷：32
- 期：10
- 页码：2365-2371
- 文件大小：1152 K
摘要
(Mg<sub>1鈭?em>xsub>Zn<sub>xsub>)<sub>1.8sub>Ti<sub>1.1sub>O<sub>4sub> (x = 0.03-1.00) ceramics were prepared via the conventional solid-state method and their dielectric properties were investigated in the microwave frequency region. Formation of solid solutions was confirmed by the X-ray diffraction analysis, the EDX analysis, and the measured lattice parameters. A small amount of Zn substitution for Mg produced a large increase in Q 脳 f due to a high packing fraction as well as a high relative density of the ceramics. By increasing x from 0.00 to 0.06, the Q 脳 f of the specimen could be tremendously improved from 141,000 to a maximum of 210,700 GHz (at 10.52 GHz), demonstrating an unique potential for low-loss microwave applications. The 蟿<sub>fsub> values were found to retain in the range from 鈭?4.2 to 鈭?2.3 ppm/掳C for all compositions because the resultant change of unit cell volume was small. Also, a remarkable lowering of the sintering temperature down to 鈭?00 掳C was observed when Mg was totally substituted by Zn, thereby making it possible for low firing applications.