Advance in next Century nanoCMOSFET research
- 作者：Huey-Liang Hwang ; Yan-Kai Chiou ; Che-Hao Chang ; Chen-Chan Wang ; Kun-Yu Lee ; Tai-Bor Wu ; Raynien Kwo ; Minghwei Hong ; Kuei-Shu Chang-Liao ; Chun-Yuan Lu ; Chun-Chang Lu ; Fu-Chien Chiu ; Chun-Heng Chen ; Jos
- 关键词：Nano ; MOSFET ; High-k dielectric ; Metal gate
- 刊名：Applied Surface Science
- 出版年：2007
- 期刊代码：6_01694332
- 类别：ms
- 出版时间：31 October 2007
- 卷：254
- 期：1
- 页码：236-241
- 文件大小：992 K
摘要
It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years.