Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model

详细信息	查看全文 | 推荐本文 |

• 作者：Tsung-Hsiang Shih^a ; ^{TH.Shih@auo.com} ; Shou-Wei Fang^a ; Jen-Yu Lee^a ; Guan-Yu Lin^a ; Yu-Hung Chen^a ; Lung-Pao Hsin^a ; Hsin-Hung Li^b ; Chin-Wei Yang^b ; Chien-Tao Chen^c ; Hsiung-Hsing Lu^a ; Kai-Chung Cheng^b ; Chih-Yuan Lin^c ; Chia-Yu Chen^a ; Chun-Ming Yang^b ; He-Ting Tsai^c ; Yu-Hsin Lin^a
• 关键词：TFTs ; IGZO ; TiO2 ; Stability ; S-E model
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：July, 2012
• 卷：73
• 期：Complete
• 页码：74-77
• 文件大小：1119 K

摘要

We have successfully fabricated large sized amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than 卤0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model.