Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact
- 作者：Masahide Tona ; Hirofumi Watanabe ; Satoshi Takahashi ; Nobuyuki Nakamura ; Nobuo Yoshiyasu ; Makoto Sakurai ; Toshifumi Terui ; Shinro Mashiko ; Chikashi Yamada ; Shunsuke Ohtani
- 关键词：Highly charged ion (HCI) ; Si(1 1 1)-(7 × ; 7) surface ; Scanning tunneling microscope (STM) ; Time of flight secondary ion mass spectrometry (TOF/SIMS)
- 刊名：Surface Science
- 出版年：2007
- 期刊代码：104_00396028
- 类别：ch
- 出版时间：1 February 2007
- 卷：601
- 期：3
- 页码：723-727
- 文件大小：322 K
摘要
Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Sin+) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.