摘要
A Eu<sup>2+sup> doped LiSrBO<sub>3sub> phosphor has been synthesized by a double-sintering process under a reducing atmosphere on the purpose of searching broad-band red phosphors. LiSrBO<sub>3sub>: Eu<sup>2+sup> shows a broad emission band with a maximum at 618 nm under excitation of 460 nm-light, which is due to a large covalency and a high crystal field splitting. Although a phosphor-converted LED was fabricated with the synthesized LiSrBO<sub>3sub>: Eu<sup>2+sup> and a 460 nm-emitting InGaN chip, this phosphor cannot be applied in LED until the quantum efficiency is improved.