Precursors of a-CN_x(:H) films from the decompositions of BrCN and CH₃CN with the discharged products of Ar

详细信息	查看全文 | 推荐本文 |

• 作者：Haruhiko Ito ; ^{bu7dd8@nagaokaut.ac.jp} ; Ayumi Yamamoto ; Hitoshi Araki ; Akira Wada
• 关键词：Hydrogenated amorphous carbon nitride ; Microwave plasma CVD ; CN radicals ; Mechanism of deposition
• 刊名：Diamond and Related Materials
• 出版年：2012
• 期刊代码：30_09259635
• 类别：ms
• 出版时间：April, 2012
• 卷：24
• 期：Complete
• 页码：121-125
• 文件大小：764 K

摘要

The decomposition reaction of CH₃CN induced by the microwave discharge flow of Ar was applied to the formation of hydrogenated amorphous carbon nitride (a-CN_x:H) films. A discussion was developed on whether CN(X²危⁺) radicals are the dominant source of N atoms of films based on the ratios of the fluxes 桅_a-CN/桅_CN(X) evaluated for the cases of CH₃CN and BrCN as the starting materials. The flux of CN(X²危⁺) radicals arrived onto the substrate surface, 桅_CN(X), was evaluated from the number density of CN(X²危⁺) radicals determined from the intensity measurement of the laser-induced fluorescence spectrum of the CN(A²螤_i-X²危⁺), 4-0 band together with the flow speed measured by the time-resolved emission. The flux of N atoms incorporated into films, 桅_a-CN, was evaluated from the atomic-composition analysis by XPS and the mass of film. According to the discussions on the difference of the above ratios and on the electron densities in the reaction region, CN(X²危⁺) radicals are suggested to be the dominant N source of a-CN_x:H films.