Deposition of Cu<sub>2sub>ZnSnS<sub>4sub> thin films by vacuum thermal evaporation from single quaternary compound source
- 作者：Chengwu Shi<sup> ; sup><sup>shicw506@gmail.comsup> ; Gaoyang Shi ; Zhu Chen ; Pengfei Yang ; Min Yao
- 关键词：Cu2ZnSnS4 ; Vacuum thermal evaporation ; Thin film ; Solar energy materials
- 刊名：Materials Letters
- 出版年：2012
- 期刊代码：59_0167577x
- 类别：ms
- 出版时间：15 April, 2012
- 卷：73
- 期：Complete
- 页码：89-91
- 文件大小：433 K
摘要
Cu<sub>2sub>ZnSnS<sub>4sub> (CZTS) thin films were successfully deposited using vacuum thermal evaporation from single quaternary CZTS semiconducting material powder source, followed by annealing at 300 掳C for 40 min under high purity N<sub>2sub> atmosphere. X-ray diffraction (XRD) patterns indicated that as-deposited CZTS thin films transformed from amorphous state into crystalline state with kesterite structure after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films were Zn-poor, Sn-rich and S-rich. Scanning electron microscope (SEM) images, ultraviolet-visible-near infrared (UV-Vis-NIR) spectra and the Hall measurements showed the annealed CZTS thin film exhibited a smooth, densely packed and homogeneous surface, a direct band gap of 1.55 eV and a p-type conductivity. The fabricated photovoltaic device obtained a conversion efficiency of 0.36%, open-circuit voltage of 493 mV, short-circuit current density of 1.76 mA路cm<sup>鈭?#xA0;2sup>, and fill factor of 0.42.