P-type transparent conducting SnO<sub>2sub>:Zn film derived from thermal diffusion of Zn/SnO<sub>2sub>/Zn multilayer thin films
- 作者：Jiamiao Ni<sup>asup><sup> ; sup><sup>bsup><sup> ; sup><sup>csup><sup> ; sup><sup>nijiamiaolf@163.comsup> ; Xiujian Zhao<sup>asup><sup> ; sup><sup>opluse@whut.edu.cnsup> ; Jiang Zhao<sup>asup><sup> ; sup><sup>azurezhj@163.comsup>
- 关键词：SnO2 ; Zn film ; Zn/SnO2/Zn film ; P-type ; Sputtering ; Thermal diffusion ; Transparent conducting film
- 刊名：Surface and Coatings Technology
- 出版年：2012
- 期刊代码：106_02578972
- 类别：ms
- 出版时间：15 June, 2012
- 卷：206
- 期：21
- 页码：4356-4361
- 文件大小：685 K
摘要
Highly transparent, p-type conducting SnO<sub>2sub>:Zn thin films are prepared from the thermal diffusion of a sandwich structure of Zn/SnO<sub>2sub>/Zn multilayer thin films deposited on quartz glass substrate by direct current (DC) and radio frequency (RF) magnetron sputtering using Zn and SnO<sub>2sub> targets. The deposited films were annealed at various temperatures for thermal diffusion. The effect of annealing temperature and time on the structural, electrical and optical performances of SnO<sub>2sub>:Zn films was studied. XRD results show that all p-type conducting films possessed polycrystalline SnO<sub>2sub> with tetragonal rutile structure. Hall effect results indicate that the treatment at 400 掳C for 6 h was the optimum annealing parameters for p-type SnO<sub>2sub>:Zn films which have relatively high hole concentration and low resistivity of 2.389 脳 10<sup>17sup> cm<sup>鈭?#xA0;3sup> and 7.436 惟 cm, respectively. The average transmission of the p-type SnO<sub>2sub>:Zn films was above 80%in the visible light range.