摘要
Highly transparent, p-type conducting SnO<sub>2sub>:Zn thin films are prepared from the thermal diffusion of a sandwich structure of Zn/SnO<sub>2sub>/Zn multilayer thin films deposited on quartz glass substrate by direct current (DC) and radio frequency (RF) magnetron sputtering using Zn and SnO<sub>2sub> targets. The deposited films were annealed at various temperatures for thermal diffusion. The effect of annealing temperature and time on the structural, electrical and optical performances of SnO<sub>2sub>:Zn films was studied. XRD results show that all p-type conducting films possessed polycrystalline SnO<sub>2sub> with tetragonal rutile structure. Hall effect results indicate that the treatment at 400 掳C for 6 h was the optimum annealing parameters for p-type SnO<sub>2sub>:Zn films which have relatively high hole concentration and low resistivity of 2.389 脳 10<sup>17sup> cm<sup>鈭?#xA0;3sup> and 7.436 惟 cm, respectively. The average transmission of the p-type SnO<sub>2sub>:Zn films was above 80%in the visible light range.