Passivation of a Metal Contact with a Tunneling Layer

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• 作者：X. Loozen^a ; ^{xavier.loozen@imec.be} ; J.B. Larsen^a ; ^b ; F. Dross^a ; M. Aleman^a ; T. Bearda^a ; B.J. O'Sullivan^a ; I. Gordon^a ; J. Poortmans^a
• 关键词：Silicon solar cells ; Contact passivation ; Tunneling layer ; Aluminum oxide ; MIS contact ; PERC
• 刊名：Energy Procedia
• 出版年：2012
• 期刊代码：P136_18766102
• 类别：pw
• 出版时间：2012
• 卷：21
• 期：Complete
• 页码：75-83
• 文件大小：637 K

摘要

The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5 nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5 nm, a 1.5 nm AlOx layer is found to be a candidate of choice for contact passivation.