The effect of Al-O substitution for Si-N on the luminescence properties of YAG:Ce phosphor

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• 作者：Mał ; gorzata Sopicka-Lizer^a ; ^{malgorzata.sopicka-lizer@polsl.pl} ; Daniel Michalik^a ; ^{daniel.michalik@polsl.pl} ; Julian Plewa^b ; ^{plewa@fh-muenster.de} ; Thomas Juestel^b ; ^{tj@fh-muenster.de} ; Holger Winkler^c ; ^{holger.winkler@merck.de} ; Tomasz Pawlik^a ; ^{tomasz.pawlik@polsl.pl}
• 关键词：Powders-solid state reaction ; Optical properties ; Si3N4 ; YAG ; Ce
• 刊名：Journal of the European Ceramic Society
• 出版年：2012
• 期刊代码：53_09552219
• 类别：ms
• 出版时间：June, 2012
• 卷：32
• 期：7
• 页码：1383-1387
• 文件大小：641 K

摘要

The present paper describes the effect of various Si-N substitution degree on the crystal structure and optical properties of yellow YAG:Ce phosphor commonly used with combination of InGaN in white LEDs. It has been found that the course of silicon/nitrogen YAG:Ce garnet doping as well as formation of the liquid phase and its chemical composition controlled formation of the side phase besides YAG:Ce. Substitution of Al-O for Si-N chemical bonds according to the general formula Y_2.94Ce_0.06Al_(5鈭?em>x)Si_xO_(12鈭?em>x)N_x was confirmed by changes of the unit cell parameter and formation of the Si-N bonds as detected by FT-IR studies. Formation of the nitrogen ligand in cerium arrangement resulted in a red shift in emission spectrum of trivalent cerium if nominal x value was in the range of 0.2-0.3. Above x = 0.3 only decrease of emission intensity was observed because of the secondary phase precipitation but further solution of Si-N in YAG:Ce crystal lattice cannot be excluded.