Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

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• 作者：Jun Li^a ; ^b ; ^{lijun_yt@shu.edu.cn} ; Fan Zhou^a ; Hua-Ping Lin^a ; Wen-Qing Zhu^a ; ^b ; Jian-Hua Zhang^b ; Xue-Yin Jiang^a ; Zhi-Lin Zhang^a ; ^b
• 关键词：Photosensitivity ; InGaZnO ; CuPc ; Transistor
• 刊名：Superlattices and Microstructures
• 出版年：2012
• 期刊代码：122_07496036
• 类别：ms
• 出版时间：April, 2012
• 卷：51
• 期：4
• 页码：538-543
• 文件大小：495 K

摘要

A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium-gallium-zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p-n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (V_GS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p-n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.