Electrical bistable properties of copper phthalocyanine at different deposition rates
- 作者：K. Onlaor ; korakot.onlaor@gmail.com ; B. Tunhoo ; P. Keeratithiwakorn ; T. Thiwawong ; J. Nukeaw
- 关键词：CuPc ; Organic memory ; Memory device ; Conduction mechanism
- 刊名：Solid-State Electronics
- 出版年：2012
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：June, 2012
- 卷：72
- 期：Complete
- 页码：60-66
- 文件大小：898 K
摘要
Organic bistable memory device is a next-generation of the electrical memory unit. In this paper, we report about the influence of structural properties on electrical bistable behavior of copper phthalocyanine organic memory device. Copper phthalocyanine (CuPc) layer was prepared by thermal evaporation technique at different deposition rates. When the deposition rate is increased, the film crystalline decreases and the surface morphology gradually changes from large flat grain to fine grain structure. Structural parameters such as the crystalline size of CuPc films and dislocation density can be calculated from XRD spectra. Moreover, the effect of deposition rate of CuPC layer on the bistable properties can be performed by current-voltage characteristics, retention measurement, impedance spectroscopy and temperature dependence measurement. The conduction mechanism in both ON and OFF states of the bistable device was analyzed by theoretical model, which can be proposed as a possible trap center of the carrier trapping and de-trapping process by structural defects in CuPc layer. Furthermore, the reliability issue such as cycling endurance and data retention is presented.