Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates

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• 作者：Junichi H. Kaneko^a ; ^{higedon@eng.hokudai.ac.jp} ; Fumiyuki Fujita^a ; Yuta Konno^a ; Takuto Gotoh^a ; Norihiko Nishi^a ; Hideyuki Watanabe^b ; Akiyoshi Chayahara^b ; Hitoshi Umezawa^b ; Nobuteru Tsubouchi^b ; Shinichi Shikata^b ; Mitsutaka Isobe^c
• 关键词：CVD diamond single crystal ; Homoepitaxial growth ; HP/HT type IIa substrate ; Off-angle (001) surface ; Lift-off method ; Induced charge distribution measurement
• 刊名：Diamond and Related Materials
• 出版年：2012
• 期刊代码：30_09259635
• 类别：ms
• 出版时间：June, 2012
• 卷：26
• 期：Complete
• 页码：45-49
• 文件大小：852 K

摘要

As part of the development of diamond radiation detectors for energy spectrometry, quality improvement of CVD diamond single crystals was conducted mainly by measures of single diamond substrates. To suppress stress resulting from unconformity of lattice spacing between a substrate and a grown layer, which sometimes causes breakage, HP/HT type IIa diamond single-crystal substrates were adopted, and it resulted successfully. In addition an off-axis (001) surface was fabricated on the substrate to reduce abnormal growth. A lift-off method was adopted to reuse the HP/HT type IIa substrate with an off-axis (001) surface. Judging from peaks caused by free exciton recombination in cathode luminescence spectra, growth conditions more strongly affected the diamond crystal quality than substrates of any kind. Energy resolution of 0.6%for alpha particles was obtained by one CVD diamond single crystal. Charge collection efficiency of approximately 100%and 95%for holes and electrons was achieved. Step bunching caused by residual gas was observed on the grown CVD diamond surface. From the perspective of charge carriers' transportation measurement, the reduction of residual gas and optimization of growth conditions are indispensable.