AlGaN/GaN heterostructure field-effect transistors with multi-Mg_xN_y/GaN buffer and Photo-CVD SiO₂ gate dielectric

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• 作者：K.H. Lee^a ; P.C. Chang^b ; ^{pcchang@mail.ksu.edu.tw} ; S.J. Chang^c ; Y.K. Su^c ; ^d
• 关键词：Heterostructure field-effect transistors ; Multi-MgxNy/GaN buffer ; Photo-CVD SiO2
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：June, 2012
• 卷：72
• 期：Complete
• 页码：38-43
• 文件大小：764 K

摘要

We report the fabrication of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-Mg_xN_y/GaN as an epitaxial buffer and using SiO₂ dielectric by photochemical vapor deposition (Photo-CVD) simultaneously for surface passivation and as gate insulator. High quality SiO₂ dielectric was successfully deposited onto AlGaN by Photo-CVD compared with the traditional plasma enhanced chemical vapor deposition (PE-CVD). Compared to conventional AlGaN/GaN HFET, the MOS-HFET with Photo-CVD SiO₂ exhibits lower leakage current, higher breakdown voltage and channel current. It was also observed that our MOS-HFETs presented pure 1/f noise with smaller trapping effects and improved immunity to the RF current collapse.