摘要
Local vibrations of oxygen in Ge crystals grown by the Czochralski method adopting liquid-B2O3 encapsulation and GeO2 powder doping were investigated by Fourier-transform infrared spectroscopy. Strong absorption peaks at 855 cm鈭?, originating in local vibration of interstitially dissolved oxygen Oi as Ge-Oi-Ge quasi-molecules, developed depending on the doped amount of GeO2. Similarly, an absorption peak related to the combined vibration of Ge-Oi-Ge was found at 1264 cm鈭? and the conversion factor from the peak intensity to the oxygen concentration was evaluated to be 1.15脳1019 cm鈭?. By prolonged annealing at 350 掳C an absorption peak developed at 780 cm鈭?, indicating formation of oxygen-related thermal donors. From the variations of carrier density and oxygen concentration, one donor was found to possess about 15 Oi atoms.