Effects of strain field in nitrogen-mediated Co film growth on Cu(0 0 1): Segregation and electronic structure change
- 作者：Daiichiro Sekiba ; Shunsuke Doi ; Kan Nakatsuji and Fumio Komori
- 关键词：Models of surface kinetics ; Low energy electron diffraction (LEED) ; Ion implantation methods ; X-ray photoelectron spectroscopy ; Scanning tunneling microscopy ; Epitaxy ; Growth ; Nanopatterning ; Surface segregation ; Surface stress ; Surface tension ; Cobalt ; C
- 刊名：Surface Science
- 出版年：2005
- 期刊代码：104_00396028
- 类别：ch
- 出版时间：2005
- 卷：590
- 期：2-3
- 页码：138-145
- 文件大小：249 K
摘要
Growth modes of Co thin films on the both N-saturated and partially N-adsorbed Cu(0 0 1) surfaces are studied in detail. From results of the STM and XPS measurements, segregation of N atoms depending on the Co island size is concluded. This new type of atom segregation is explained by means of a lattice strain of the substrate due to the small Co island formation. A novel core-level shift of N 1s during the Co film growth is also reported. A possible influence of the lattice strain to the electronic structure of the surfactant is discussed.