Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

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• 作者：M. Godbole^a ; ^{mohit.godbole@nmmu.ac.za} ; E.J. Olivier^a ; E. Coetsee^b ; H.C. Swart^b ; J.H. Neethling^a ; J.R. Botha^a
• 关键词：InSb ; GaSb ; Nanodots ; Atomic force microscopy ; Scanning electron microscopy ; Auger electron spectroscopy
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：15 May, 2012
• 卷：407
• 期：10
• 页码：1566-1569
• 文件大小：749 K

摘要

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 渭m. In this particular study, the dots were grown at 450 掳C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 渭m while the best spacer thickness was found to be 200 nm.