摘要
State-of-the-art, novel and inexpensive chemical deposition route was selected for the preparation of Cd0.825Pb0.175S thin films. Optimized deposition parameters were: time = 60 min, temperature = 80 掳C, speed of substrate rotation = 65 卤 2 rpm and pH = 10.5 卤 0.1. XRD analysis of polycrystalline Cd0.825Pb0.175S thin films revealed mixture of hexagonal and cubic phases. Morphological features rigorously define nucleation and subsequent growth of thin film layers. Detailed investigations on power output curves underline the boost in conversion efficiency from 0.184%to 0.245%with increase in layer thickness. Low conversion efficiency in the present case is attributed to the higher photoelectrode resistance and significant light absorption by the electrolyte.