Conductive Gas Barriers Prepared by Using Atomic Layer Deposition Technique
- 作者：Chih-Chieh Yu ; 0809535@itrc.narl.org.tw ; Meng-Yen Tsai ; Chien-Nan Hsiao
- 关键词：Atomic layer deposition (ALD) ; aluminum doped zinc oxide (AZO) ; ALD thin film ; gas barrier ; WVTR
- 刊名：Procedia Engineering
- 出版年：2012
- 期刊代码：P56_18777058
- 类别：et
- 出版时间：2012
- 卷：36
- 期：Complete
- 页码：562-570
- 文件大小：1355 K
摘要
In this study, atomic layer deposition (ALD) has been applied to deposit aluminum doped zinc oxide (AZO) films as gas barriers, successfully. Diethylzinc and trimethylaluminum were used as precursors and water as oxidant. Sequential deposition steps of 400 ALD cycles have been adopted to prepare AZO films. Influences of deposition temperatures on electro-optical properties have studied by using Hall-effect measurement and transmittance spectrometer. AZO film deposited at 130 oC has a low resistivity of 5脳10-3 惟-cm. Water vapor transmittance rate has been carried out by using Mocon Permatran-W 3/61. The WVTR performances of ALD barriers, which highly related to the physical conditions of interfaces between nanolaminated structures, have been measured as 0.001 - 2 g/m2*25oC*day.