Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition
- 作者：Mei-Hui Liang ; Yen-Teng Ho ; Wei-Lin Wang ; Chun-Yen Peng ; Li Chang
- 关键词：A1. Characterization ; A3. Laser epitaxy ; B1. Oxides ; B2. Semiconducting II– ; VI materials deposition
- 刊名：Journal of Crystal Growth
- 出版年：2008
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：April 2008
- 卷：310
- 期：7-9
- 页码：1847-1852
- 文件大小：983 K
摘要
High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire.