Ba
0.6Sr
0.4TiO
3 films were deposited by
pulsed laser deposition on orthorhombic REScO
3(1 1 0) (RE=Dy, Gd) single-crystal substrates. Films were investigated for their growth mode, crystalline quality, and strain states. Substrates were treated prior to growth to produce atomically flat surfaces having wide terraces (≈200 nm) and clear unit-cell-high steps. Atomic force microscopy and reflection high-energy electron diffraction indicated that the films grew epitaxially in a two-dimensional (2D) layer-by-layer mode. X-ray diffraction showed that all films (200 nm thick and less) were coherently/orthorhombically strained to the substrate according to the epitaxial relationship: (0 0 1)
film![short parallel short parallel](http://www.sciencedirect.com/scidirimg/entities/2225.gif)
(1 1 0)
substrate; [1 0 0]
film![short parallel short parallel](http://www.sciencedirect.com/scidirimg/entities/2225.gif)
[0 0 1]
substrate (and [0 1 0]
film![short parallel short parallel](http://www.sciencedirect.com/scidirimg/entities/2225.gif)
[1 1¯ 0]
substrate). (0 0 2) rocking curves were 17 and 20 arcsec wide for films grown on RE=Dy and Gd, respectively.These films have rocking curve widths and dislocation densities that are several orders of magnitude lower than a film grown on SrTiO
3 (0 0 1).