Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition
- 作者：Yen-Teng Ho ; Mei-Hui Liang ; Feng-Ke Hsiao ; Wei-Lin Wang ; Chun-Yen Peng ; Wei-Da Chen ; Wei-I Lee ; Li Chang
- 关键词：A1. X-ray diffraction ; A3. Laser epitaxy ; B1. Nitride
- 刊名：Journal of Crystal Growth
- 出版年：2008
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：April 2008
- 卷：310
- 期：7-9
- 页码：1614-1618
- 文件大小：652 K
摘要
Non-polar (1 1 2¯ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN
[1 1¯ 0]LAO and [1 1¯ 00]GaN[1 1¯ 0]LAO.
[1 1¯ 0]LAO and [1 1¯ 00]GaN[1 1¯ 0]LAO.