Enhanced ferroelectric polarization in tetragonally strained NaNbO₃ thin film on single crystal Rh substrate

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• 作者：W.J. Maeng^a ; I. Jung^b ; J.Y. Son^c ; ^{jyson@khu.ac.kr}
• 关键词：A1. X-ray diffraction ; A3. Laser epitaxy ; B1. Oxides ; B2. Ferroelectric materials
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 June, 2012
• 卷：349
• 期：1
• 页码：24-26
• 文件大小：344 K

摘要

Epitaxial NaNbO₃ thin films were deposited on single crystal Rh substrates by pulsed laser deposition. The epitaxial NaNbO₃ thin film exhibited the tetragonally stained structure with a c/a ratio of about 1.04 and a good ferroelectric property with the high remanent polarization (P_r) of about 40 渭C/cm². The piezoresponse force microscope study revealed that the epitaxial NaNbO₃ thin film has a mosaic ferroelectric domain structure. A Pt/NaNbO₃/Rh capacitor showed rapid ferroelectric switching behavior, which gives opportunity for a non-volatile memory application.