High-efficiency microstructured semiconductor neutron detectors that are arrayed, dual-integrated, and stacked

详细信息	查看全文 | 推荐本文 |

• 作者：Steven L. Bellinger^a ; ^{slb3888@ksu.edu} ; Ryan G. Fronk^a ; Timothy J. Sobering^b ; Douglas S. McGregor^a
• 关键词：Semiconductor neutron detectors ; Microstructured solid-state neutron detector ; He-3 replacement technology ; Microstructured diode ; Silicon wet-etching
• 刊名：Applied Radiation and Isotopes
• 出版年：2012
• 期刊代码：6_09698043
• 类别：ce
• 出版时间：July, 2012
• 卷：70
• 期：7
• 页码：1121-1124
• 文件大小：795 K

摘要

Silicon diodes with large aspect ratio 3D microstructures backfilled with ⁶LiF show a significant increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods and summed-detector 6脳6-element arraying methods to dramatically increase the sensitivity to thermal neutrons. The intrinsic detection efficiency of the 6脳6 array for normal-incident 0.0253 eV neutrons was found 6.8%compared against a calibrated ³He proportional counter.