Thermal dewetting of Pt thin film: Etch-masks for the fabrication of semiconductor nanostructures

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• 作者：Ji-Myon Lee ; Byung-Il Kim
• 关键词：Nanostructure ; Dewetting ; Pt ; GaN ; Thermal annealing
• 刊名：Materials Science and Engineering ; A
• 出版年：2007
• 期刊代码：61_09215093
• 类别：ms
• 出版时间：25 March 2007
• 卷：449-451
• 期：Complete
• 页码：769-773
• 文件大小：889 K

摘要

Nanometer scale Pt metal islands formed by the dewetting of two-dimensional film on SiO₂ dielectric materials during rapid thermal annealing were investigated. For the case of 30 nm thick Pt films, pattern formation and dewetting were initiated at temperatures of >600 °C. Controlling the annealing temperature and time as well as the thickness of the Pt metal film permitted the size and density of Pt islands to be controlled. Furthermore, the islands show good resistance to dry-etching by a CF₄-based plasma for dielectric etching, indicating that the metal islands produced by dewetting are suitable for use as an etch-mask in the fabrication of nano-scale structures.