Influence of porosity on electrical properties of low-k dielectrics

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• 作者：Els Van Besien^a ; ^{els.vanbesien@imec.be} ; Marianna Pantouvaki^a ; Larry Zhao^b ; David De Roest^c ; Mikhail R. Baklanov^a ; Zsolt T艖kei^a ; Gerald Beyer^a
• 关键词：BEOL ; Low-k ; Porosity ; TDDB
• 刊名：Microelectronic Engineering
• 出版年：2012
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April, 2012
• 卷：92
• 期：Complete
• 页码：59-61
• 文件大小：383 K

摘要

TDDB, voltage ramp, and capacitance measurements for a series of low-k materials deposited by PE-CVD, with porosity values between 5%and 33%, are presented. A test structure based on MIS planar capacitors, designed to investigate intrinsic electrical properties, has been used. It is shown that, in general, a higher porosity results not only in a lower k-value, but also a higher leakage current, lower breakdown voltage and shorter lifetime. The higher leakage can be attributed to the presence of more porogen residues. This is confirmed by the decrease of the leakage when a He/H₂ plasma, known to remove the porogen residues, is applied.