Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

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• 作者：An-Bo Zhi^a ; ^b ; Fu-Wen Qin^a ; ^b ; ^{qfw@dlut.edu.cn} ; Dong Zhang^a ; ^b ; Ji-ming Bian^a ; Bo Yu^a ; ^b ; Zhi-Feng Zhou^a ; ^b ; Xin Jiang^b ; ^c
• 关键词：Low temperature ; InN ; Glass substrates ; ECR-PEMOCVD
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：29 February, 2012
• 卷：86
• 期：8
• 页码：1102-1106
• 文件大小：829 K

摘要

High quality InN films are deposited with an interlayer of high c-orientation (002) AZO (Aluminium-doped Zinc Oxide; ZnO:Al) films on glass substrates by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature. AZO films used as a buffer layer are effective for the epitaxial growth of InN films. The influence of Trimethyl Indium (TMIn) flux on the properties of InN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and optical transmittance spectra. The results indicate that high quality InN films with high c-orientation and small surface roughness are successfully achieved at an optimized Trimethyl Indium (TMIn) flux of 5.5聽sccm. The InN/AZO structures have great potential for the development of full spectra solar cells.