Structure of V thin films on Al(100) using XPD, LEED, and LEIS

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• 作者：W. Priyantha^a ; ^{wp13@txstate.edu} ; R. Droopad^a ; M. Kopczyk^b ; R.J. Smith^b ; A. Kayani^c
• 关键词：X-ray photoelectron diffraction (XPD) ; Low energy electron diffraction (LEED) ; V ; Al ; Thin film growth ; Surface alloying
• 刊名：Surface Science
• 出版年：2012
• 期刊代码：104_00396028
• 类别：ch
• 出版时间：August, 2012
• 卷：606
• 期：15-16
• 页码：1160-1166
• 文件大小：1260 K

摘要

We have used X-ray photoelectron diffraction (XPD), low energy electron diffraction (LEED), and low energy ion scattering (LEIS) to determine the atomic structure of V thin films grown on the Al(100) single crystal surface. For V film thicknesses ranging from 0.75 ML-7 ML, the LEED patterns show no significant changes from the p(1 脳 1) symmetry of a clean Al(100) surface, other than becoming more diffuse for higher V coverage. XPD and LEIS spectra indicate that during the initial deposition (1-3 ML) V atoms diffuse into the Al lattice, and tend to accumulate at the surface during subsequent deposition. Strain associated with the lattice mismatch for V and Al is likely relieved by the formation of a surface alloy during the first few ML's of V deposition. For 7 ML V coverage, XPD and LEED showed that an ordered V structure is stabilized on the Al(100) surface. Due to the close resemblance of the V and Al XPD polar scans, we conclude that V and Al are occupying similar lattice sites in tetragonally distorted bcc lattice, although the specific lattice location of the V and Al atoms is not clear.