Monte Carlo growth and in situ characterisation for Al_xGa_1−xAs heteroepitaxy

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• 作者：Fazouan ; N. ; Atmani ; E. ; Djafari-Rouhani ; M. ; Est脙脙ve ; A.
• 关键词：79.60.Dp ; 81.05.Ea ; 81.10.Aj ; Simulation ; Physisorbed molecules ; Photoemission current ; Reflection high-energy electron diffraction ; Al _x Ga_1芒芒芒x As alloy
• 刊名：Computational Materials Science
• 出版年：2005
• 期刊代码：31_09270256
• 类别：et
• 出版时间：April, 2005
• 卷：33
• 期：1-3
• 页码：382-387
• 文件大小：268 K

摘要

We present a kinetic Monte Carlo model describing the growth of Al_xGa_1−xAs heterostructure and including a local photoemission model with reflection high-energy electron diffraction (RHEED) intensity for comparison. The model assumes growth under As rich conditions typical for molecular beam epitaxy (MBE). We have examined the Al_xGa_1−xAs morphology with 0  x  1 and the growth of normal and inverted interface of AlAs–GaAs system. We show, as has been observed experimentally [J. Electrochem. Soc. 129 (1982) 824; J. Vac. Sci. Technol. B 4 (2) (1986) 590], a roughness Al_xGa_1−xAs front profile for high Al concentrations and a difference in the quality of the two AlAs–GaAs interfaces due to a lower diffusivity of Al atoms compared to Ga atoms.