Electrochemical doping for lowering contact barriers in organic field effect transistors

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• 作者：Stefan Schaur^a ; Philipp Stadler^a ; ^{philipp@stadlers.ca} ; Beatriz Meana-Esteban^a ; ^b ; ^c ; Helmut Neugebauer^a ; N. Serdar Sariciftci^a
• 关键词：Electrochemical doping ; Pentacene ; Gold-pentacene interface ; Contact barrier ; Metal-p-i junction
• 刊名：Organic Electronics
• 出版年：2012
• 期刊代码：137_15661199
• 类别：et
• 出版时间：August, 2012
• 卷：13
• 期：8
• 页码：1296-1301
• 文件大小：952 K

摘要

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices.