New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

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• 作者：Dragoi ; V. ; Lindner ; P. ; Tischler ; M. ; Schaefer ; C.
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2002
• 期刊代码：65_13698001
• 类别：ms
• 出版时间：August - October, 2002
• 卷：5
• 期：4-5
• 页码：425-428
• 文件大小：281 K

摘要

A new alignment technique is proposed for wafer level 3D interconnects fabrication: the SmartView^®. This original procedure is using alignment keys located in the bonding interface and enables an alignment precision of 1μm. The method uses two top–bottom microscope pairs for observing the alignment keys and a minimal Z-axis travel during wafer alignment procedure. After the alignment procedure, the wafers are secured for subsequent wafer bonding procedures. The alignment process is presented in detail, as well as the integration of such an equipment in high production systems able to run wafers up to 300mm diameter.