Non-destructive quantitative analysis of the Ge concentration in SiGe quantum wells by means of low energy RBS

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• 作者：M. Draxler ; M. Mü ; hlberger ; F. Schä ; ffler and P. Bauer
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2005
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：2005
• 卷：240
• 期：3
• 页码：733-740
• 文件大小：394 K

摘要

The Ge concentration in MBE-grown SiGe quantum wells was quantitatively and non-destructively analyzed by means of low energy Rutherford backscattering (RBS). The me="mml1">method=retrieve&_udi=B6TJN-4GNTFD4-3&_mathId=mml1&_user=10&_cdi=5315&_rdoc=19&_handle=V-WA-A-W-WB-MsSAYVW-UUW-U-AABZBCWVCZ-AABBEBBWCZ-CAYCUBEAY-WB-U&_acct=C000050221&_version=1&_userid=10&md5=c0066b2edafac617b2a3b788329b3f32" title="Click to view the MathML source">Si_1-x1Ge_x1 quantum wells were clad between me="mml2">method=retrieve&_udi=B6TJN-4GNTFD4-3&_mathId=mml2&_user=10&_cdi=5315&_rdoc=19&_handle=V-WA-A-W-WB-MsSAYVW-UUW-U-AABZBCWVCZ-AABBEBBWCZ-CAYCUBEAY-WB-U&_acct=C000050221&_version=1&_userid=10&md5=03a5fec695bed68dd329133ae65b9148" title="Click to view the MathML source">Si_1-x2Ge_x2 potential barriers, where x₂ > x₁. The thicknesses of the analyzed quantum wells were about 12 nm and they were situated at a depth of about 60 nm below the surface. Due to the lower Ge concentration in the quantum well a dip showed up in the RBS spectra, which was evaluated. In order to obtain quantitative results, a sufficiently good depth resolution is required, which was obtained by choosing a primary energy of 500 keV and a tilt angle between 45° and 51° with respect to the surface normal. From the raw data quantitative information was deduced by comparison with simulated spectra. To obtain a spectrum, a fluence of only 1 × 10¹³ projectiles/cm² was needed, which makes the analysis virtually non-destructive. The Ge concentration in the quantum well could be determined with a precision of 1%absolute.