2D Photonic Structures for Optoelectronic Devices Prepared by Interference Lithography

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• 作者：Lubos Suslik^a ; Dusan Pudis^a ; ^{pudis@fyzika.uniza.sk} ; Jaroslava Skriniarova^b ; Ivan Martincek^a ; Ivana Kubicova^a ; Jaroslav Kovac^b
• 关键词：42.25.Hz ; 42.82.Cr ; 07.79.Fc
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：32
• 期：Complete
• 页码：807-813
• 文件大小：1309 K

摘要

Using the interference lithography based on the two-beam interference method the two-dimensional (2D) photonic structures with different symmetries were prepared in photoresist and III-V compounds surface layers. The 2D square and hexagonal patterns with periods in the range from 270 nm to 2 渭m were realized by the interference lithography. Homogeneous 2D pattern of different symmetry and shape was revealed by the atomic force microscope. The interference lithography was applied to the surface patterning of a infrared light emitting diode. Such 2D photonic diode structure shows enhanced emission from the nearfield measurements.