Modeling the breakdown statistics of Al₂O₃/HfO₂ nanolaminates grown by atomic-layer-deposition

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• 作者：A. Conde^a ; C. Martí ; nez^a ; D. Jim&eacute ; nez^a ; E. Miranda^a ; J.M. Rafí ; ^b ; F. Campabadal^b ; J. Suñ ; &eacute ; ^a ; ^{jordi.sune@uab.cat}
• 关键词：High-k dielectrics ; Percolation model ; Nanolaminate gate dielectrics
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：May, 2012
• 卷：71
• 期：Complete
• 页码：48-52
• 文件大小：1064 K

摘要

The breakdown voltage statistics of Al₂O₃/HfO₂ nanolaminate multilayer dielectrics fabricated by atomic layer deposition (ALD) are modeled within the percolation theory. Moreover, the nanolaminate breakdown properties are predicted from the breakdown statistics of the separate materials, thus providing a reliable breakdown design framework for nanolaminates. Comparison with experimental data suggests that the electric field in each of the dielectric layers, rather than the total gate voltage, is the variable that controls the breakdown statistics.