Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition

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• 作者：C.G. Jin^a ; ^c ; T. Yu^a ; ^c ; Y. Bo^a ; ^c ; Y. Zhao^a ; ^c ; H.Y. Zhang^a ; ^c ; Y.J. Dong^a ; ^c ; X.M. Wu^a ; ^c ; ^d ; ^{xmwu@suda.edu.cn} ; L.J. Zhuge^b ; ^c ; S.B. Ge^a ; ^c ; ^{sbge@suda.edu.cn}
• 关键词：High-k dielectrics ; HfO2 ; ZrO2 ; Structure ; Optical properties
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：29 February, 2012
• 卷：86
• 期：8
• 页码：1078-1082
• 文件大小：766 K

摘要

Hafnium-Zirconium-Oxide-Nitride (Hf_1鈭?em>xZr_xO_1鈭?em>yN_y) films are prepared by ion beam assisted deposition on p-Si and quartz substrates with a composite target of sintered high-purity HfO₂ and ZrO₂. The thermal stability and microstructure characteristics for Hf_1鈭?em>xZr_xO_1鈭?em>yN_y films have been investigated. EDS results confirmed that nitrogen was successfully incorporated into the Hf_1鈭?em>xZr_xO₂ films. XRD and Raman analyses showed that the Hf_1鈭?em>xZr_xO_1鈭?em>yN_y films remain amorphous after 1100聽掳C under vacuum ambient, and monoclinic HfO₂ and ZrO₂ crystals separate from Hf_1鈭?em>xZr_xO_1鈭?em>yN_y films with a increase of the annealing temperature up to 1300聽掳C. Meanwhile, the Hf_1鈭?em>xZr_xO_1鈭?em>yN_y films can also effectively suppress oxygen diffusion during high temperature annealing. AFM measurements demonstrated that surface roughness of the Hf_1鈭?em>xZr_xO_1鈭?em>yN_y films increase slightly. Then the optical properties of the samples were observed in the ultraviolet-visible range at room temperature. The variation in E_g from 5.64 to 6.09聽eV as a function of annealing temperature has also been discussed briefly.