Low temperature thermoelectric properties of Bi_{2鈭?span style='font-style: italic'>x}Sb_xTeSe₂ crystals near the n-p crossover

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• 作者：M.K. Fuccillo ; ^{fuccillo.m@gmail.com} ; ^{mkfuccil@princeton.edu} ; M.E. Charles ^{mecharle@princeton.edu} ; Y.S. Hor¹ ; ^yhor@mst.edu ; Shuang Jia ^{jia@princeton.edu} ; R.J. Cava ^{rcava@princeton.edu}
• 关键词：A. Semiconductors ; B. Doping ; D. Electronic transport ; D. Thermoelectric
• 刊名：Solid State Communications
• 出版年：2012
• 期刊代码：101_00381098
• 类别：ms
• 出版时间：July, 2012
• 卷：152
• 期：14
• 页码：1208-1211
• 文件大小：398 K

摘要

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi_2鈭?em>xSb_xTeSe₂ crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.