Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

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• 作者：H.C. Jeon^a ; S.J. Lee^a ; ^{leesj@dongguk.edu} ; T.W. Kang^a ; S.H. Park^b
• 关键词：Quantum well ; Internal field ; Optical gain ; Applied electric field
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：15 May, 2012
• 卷：407
• 期：10
• 页码：1550-1552
• 文件大小：341 K

摘要

The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.