Organic pin-diodes approaching ultra-high-frequencies

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• 作者：H. Kleemann^a ; ^{hans.kleemann@iapp.de} ; S. Schumann^b ; U. Jö ; rges^b ; F. Ellinger^b ; K. Leo^a ; B. Lü ; ssem^a
• 关键词：Organic pin-diodes ; Ultra-high-frequency diodes ; Molecular doping ; Organic rectifier circuits
• 刊名：Organic Electronics
• 出版年：2012
• 期刊代码：137_15661199
• 类别：et
• 出版时间：June, 2012
• 卷：13
• 期：6
• 页码：1114-1120
• 文件大小：650 K

摘要

Organic pin-diodes employing molecular doped hole and electron transport layers working at ultra-high-frequencies (UHF) are presented. In comparison to undoped organic Schottky diodes reported for ultra-high-frequency applications, the pin-concept is superior since the doping concentration and the intrinsic interlayer thickness can be adjusted in order to control the performance of such pin-diodes. We investigate the influence of both parameters on basic diode parameters like forward resistance and rectification ratio. In particular, we discuss the role of molecular doping and its influence on the AC signal response and we present an optimized doping ratio in order to accomplish highest charge carrier mobility and conductivity. Optimized devices are working as rectifiers up to 300 MHz at a small operating voltage of 2 V. The frequency limit is estimated to be at 1 GHz.