NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

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• 作者：A. Martinez<sup>asup><sup> ; sup><sup>a.e.martinez@swansea.ac.uksup> ; M. Aldegunde<sup>bsup> ; A.R. Brown<sup>csup> ; S. Roy<sup>csup> ; A. Asenov<sup>csup><sup> ; sup><sup>dsup>
• 关键词：Junctionless transistors ; Nanowires ; Non-Equilibrium Green Functions ; Discrete random dopants ; Statistical variability
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：May, 2012
• 卷：71
• 期：Complete
• 页码：101-105
• 文件大小：1189 K

摘要

We have carried out 3D Non-Equilibrium Green Function simulations of a junctionless gate-all-around n-type silicon nanowire transistor of 4.2 脳 4.2 nm<sup>2sup> cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 10<sup>20sup> cm<sup>鈭?sup>. Elastic and inelastic phonon scattering is considered in our simulation. Considering the dopants in a discrete way is the first step in the simulation of random dopant variability in junctionless transistors in a fully quantum mechanical way. Our results show that, for devices with an 鈥渦nlucky鈥?dopants configuration, where there is a starvation of donors under the gate, the threshold voltage can increase by a few hundred mV relative to devices with a more homogeneous distribution of dopants. For the first time we have used a quantum transport model with dissipation to evaluate the change in threshold voltage and subthreshold slope due to the discrete random donors in the channel of a junctionless nanowire nMOS transistor. These calculations require a robust convergence scheme between the quantum transport equation and the Poisson equation in order to achieve convergence in the dopant-induced resonance regime.