The effect of substrate temperature on the oxidation behavior of erbium thick films

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• 作者：H.H. Shen^a ; S.M. Peng^b ; X.G. Long^b ; X.S. Zhou^b ; L. Yang^a ; X.T. Zu^a ; ^{xtzu@uestc.edu.cn}
• 关键词：Erbium thick film ; Substrate temperature ; Oxidation behavior ; Grain size
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：29 February, 2012
• 卷：86
• 期：8
• 页码：1097-1101
• 文件大小：931 K

摘要

The effect of substrate temperature on the oxidation behavior of erbium thick films, fabricated by electron-beam vapor deposition (EBVD), was investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The erbium thick film is black when it is deposited at substrate temperature below 450聽掳C and turns gray at higher substrate temperature in a vacuum pressure of approximately 1.5聽脳聽10^鈭? Torr, which indicates that the thickness of erbium oxide layer formed on the surface of erbium films increases with the decreasing substrate temperature. XPS depth profile results demonstrate that the thickness of the surface erbium oxide layer of erbium film deposited at substrate temperature of 550 and 350聽掳C are about 50 and 75聽nm, respectively. The thicker oxide layer at lower substrate temperatures may be attributed to grain size and the dynamic vacuum condition around the substrates. Other possible factors involved in the oxidation behavior are also discussed.