Anisotropic Electrical Properties of Epitaxial Hf-doped Bi4Ti₃O₁₂ Thin Films on (100)- and (111)-oriented SrTiO₃ Substrates

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• 作者：J. Zhu ; ^{junzhu@uestc.edu.cn} ; X.P. Wang ; W.B. Luo ; Y.R. Li
• 关键词：Thin film ; Pulsed laser deposition ; Bi4Ti3O12
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：32
• 期：Complete
• 页码：938-946
• 文件大小：970 K

摘要

Epitaxial thin films of (00l)- and (104)-oriented Bi4Ti3-xHfxO12(BTH) have been fabricated on (100)- and (111)-oriented SrTiO3 substrates with SrRuO3 bottom electrodes by pulsed laser deposition, respectively. X-ray diffraction scans revealed that a unique epitaxial relationship between film and substrate: BTH (001)//SrTiO3 (001); BTH ////SrTiO3 [100] is valid for both orientations, irrespective of their orientation. The strong dependences of ferroelectric properties on the film orientation were observed. The remanent polarization 2Pr is 45.6 渭C/cm2 for (104)-oriented BTH film, while 2Pr is 4.5 渭C/cm2 for (00l)-oriented BTH film. The anisotropic properties of BTH are similar to that of pure Bi4Ti3O12(BIT): the polarization vector of BTH films is close to the a axis, indicating that Hf substitution does not change the orientation dependence of electric properties in BIT.